And the selective etching for PS film is studied on stress, oxidation, and mask problems. 同时,研究了通过电化学腐蚀方法有选择地在其表面形成多孔硅,其中涉及的应力,氧化,以及集成区域掩膜等问题。
Two different kinds of thermal oxidation technology& dry-oxygen oxidation and vapor oxidation have been compared through experiment. The results prove the feasibility of forming sheet silicon's hard mask by thermal oxidation technology. 通过实验对热氧化工艺中的两种不同方法,即干氧氧化和水汽氧化进行了比较研究,证明了利用这种工艺形成硅基片硬质掩膜的可行性。